thesis compact model

Compact Modeling

Principles, Techniques and Applications

• © 2010
• Gennady Gildenblat 0

, Sch Elect Comptr & Energy Engr, Arizona State University, Tempe, USA

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• A comprehensive book on compact models of most commonly used semiconductor devices
• Each chapter is covered by an expert, often responsible for the widely used model with wide industrial applications
• Both traditional and experimental devices are covered
• Critical variability issues are addressed
• Provides detailed coverage of compact model benchmarking which is critical for model development and applications
• Includes supplementary material: sn.pub/extras

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94 Citations

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Method for the Iterative Refinement of Parameter Values in Analytical Models of Microelectronic Devices Based on Integrated MOS Transistors

TCAD simulations and accurate extraction of reliability-aware statistical compact models

Jfet and mosfet spice models in a wide temperature range.

• Compact models
• Leistungsfeldeffekttransistor
• Variability
• bipolar junction transistor
• bipolar power transistor
• field-effect transistor
• integrated circuit
• metal oxide semiconductur field-effect transistor
• semiconductor

Table of contents (16 chapters)

Front matter, compact models of mos transistors, surface-potential-based compact model of bulk mosfet.

• Gennady Gildenblat, Weimin Wu, Xin Li, Ronald van Langevelde, Andries J. Scholten, Geert D. J. Smit et al.

PSP-SOI: A Surface-Potential-Based Compact Model of SOI MOSFETs

• Weimin Wu, Wei Yao, Gennady Gildenblat

Benchmark Tests for MOSFET Compact Models

• Xin Li, Weimin Wu, Gennady Gildenblat, Colin C. McAndrew, Andries J. Scholten

High-Voltage MOSFET Modeling

• E. Seebacher, K. Molnar, W. Posch, B. Senapati, A. Steinmair, W. Pflanzl

Physics of Noise Performance of Nanoscale Bulk MOS Transistors

• R. P. Jindal

Compact Models of Bipolar Junction Transistors

Introduction to bipolar transistor modeling.

• Colin C. McAndrew, Marcel Tutt
• R. van der Toorn, J. C. J. Paasschens, W. J. Kloosterman, H. C. de Graaff

The HiCuM Bipolar Transistor Model

• Michael Schröter, Bertrand Ardouin

Compact Models of Passive Devices

Integrated resistor modeling.

• Colin C. McAndrew

The JUNCAP2 Model for Junction Diodes

• A. J. Scholten, G. D. J. Smit, R. van Langevelde, D. B. M. Klaassen

Surface-Potential-Based MOS Varactor Model

• Zeqin Zhu, Gennady Gildenblat, James Victory, Colin C. McAndrew

Modeling of On-chip RF Passive Components

Modeling of multiple gate mosfets, multi-gate mosfet compact model bsim-mg.

• Darsen Lu, Chung-Hsun Lin, Ali Niknejad, Chenming Hu

Compact Modeling of Double-Gate and Nanowire MOSFETs

Statistical modeling.

From the reviews:

Editors and Affiliations

, sch elect comptr & energy engr, arizona state university, tempe, usa.

Gennady Gildenblat

Bibliographic Information

Book Title : Compact Modeling

Book Subtitle : Principles, Techniques and Applications

Editors : Gennady Gildenblat

DOI : https://doi.org/10.1007/978-90-481-8614-3

Publisher : Springer Dordrecht

eBook Packages : Engineering , Engineering (R0)

Copyright Information : Springer Science+Business Media B.V. 2010

Hardcover ISBN : 978-90-481-8613-6 Published: 08 September 2010

Softcover ISBN : 978-94-007-9324-8 Published: 30 September 2014

eBook ISBN : 978-90-481-8614-3 Published: 22 June 2010

Edition Number : 1

Number of Pages : XVII, 527

Topics : Circuits and Systems

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In this section

Accurate CMOS compact model and the corresponding circuit simulation in the presence of statistical variability and ageing

Ding, Jie (2015) Accurate CMOS compact model and the corresponding circuit simulation in the presence of statistical variability and ageing. PhD thesis, University of Glasgow.

As CMOS scales down to sub-50 nm, it faces critical dimensions of charge and matter granularities, leading to the drastic increase of device parameter dispersion, named statistical variability, which is one of the main contemporary challenges for further downscaling and makes each device atomistically different leading to broad dispersion of their electrical characteristics. In addition, device reliability concerns gain inertia; among them Bias Temperature Instability (BTI) shortens device lifetime by trapping charges in defect states of the insulator or at the interface. The interplay between statistical variability and BTI results in more variations on device performance and thus greatly affect circuit performance. In turn design methodologies must evolve towards variability and reliability aware design. To do so statistical compact models including both the effects of statistical variability and BTI-induced ageing are required for the large-scale statistical circuit simulation of variability and reliability.

In this study, the application of accurate compact models, that describe performance variation in the presence of both statistical variability and reliability at arbitrary BTI-induced ageing levels, to SRAM circuit simulation is described. Both SRAM cell stability and write performance are evaluated and it is seen that, due to the accurate description of device performance distributions provided by the compact models and the sensitivity of these SRAM performance metrics on device performance, the approach presented here is better suited to high-sigma statistical circuit analysis than conventional approaches based upon assumed Gaussian distributions. The approach is demonstrated using a 25 nm gate length bulk MOSFET whose performance variation is obtained from statistical TCAD simulation using the GSS simulator GARAND. The simulated performance data is then used directly as the target for BSIM4 compact model extraction that ensures device figures of merit are well resolved for each device in a statistical ensemble. The distribution of compact model parameters is then generalised into an algebraic form using Generalized Lambda Distribution (GLD) methods, so that a sufficiently large number of compact models can later be generated and interpolated at arbitrary ageing levels. Finally compact models generated in this way are used to evaluate SRAM write performance and stability under the influence of statistical variability and BTI-induced ageing.

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Hyundai Motor Group

• Hyundai INSTER

Hyundai unveils the INSTER sub-compact EV for Europe, starting at an MSRP below 25,000 euros

One week after teasing a European version of its Casper A-segment sub-compact EV called the INSTER, Hyundai Motor Group has officially unveiled the new mini-car, which holds a lot of potential with consumers. In addition to its sleek yet compact size, Hyundai promises the INSTER EV will hit Europe (and several other markets) at a starting price below 25,000 euros.

Today’s unveiling of the INSTER EV was inspired by Casper. No, not the friendly ghost, but the combustion vehicle from Hyundai that has been built and sold in South Korea since 2021. Last week, Hyundai teased an incoming all-electric version of the Casper as a “new standard for popularizing electric vehicles.”

Given its compact size and estimated affordability in the A-segment of vehicles, the Casper EV holds excellent potential for success, hence is why Hyundai is expanding its availability outside of Korea.

During the Casper EV announcement, Hyundai also shared its plans to offer the minicar in Europe, rebranded as the “INSTER.” Hyundai Motor Group has now unveiled the INSTER EV alongside some features and specs that future consumers in Europe will be able to take advantage of.

Hyundai INSTER EV coming to Europe later this year

Hyundai shared a press release detailing the new INSTER EV’s entry into Europe after officially unveiling the sub-compact during the 2024 Busan International Mobility Show earlier today.

By removing the combustion components in the original Casper vehicle, Hyundai’s redesign of the INSTER has enabled an extended body and wheelbase for more interior space. As a result, Hyundai shared the new BEV has found a sweet spot in the market between traditional A-segment sub-compact city cars and larger B-segment compacts.

The new Hyundai EV’s compact size makes it perfect for city driving and parking, two critical factors for driving in Europe. The INSTER comes standard with a 42 kWh battery pack, but customers can also upgrade to a long-range 49 kWh battery.

All versions feature a single motor that delivers 71.1 kW (~95 hp) in the base model and jumps to 84.5 kW (113 hp) in the long-range version. Either variant can create 147 Nm (108 lb-ft) of torque. Hyundai shared that the INSTER EV will offer a projected WLTP range of 300+ km (186 miles) in the standard version and up to 355km (221 miles) with the larger long-range battery (with 15″ wheels).

• Length: 3,825 mm
• Wheelbase: 2,580 mm
• Width: 1,610 mm
• Height: 1,575 mm
• Luggage Space: 280 liters (up to 351 liters with sliding rear seats)
• Standard: 140 km/h (~87 mph)
• Long-Range: 150 km/h (~93 mph)
• Standard: 11.7 seconds
• Long-Range: 10.6 seconds
• Charge Time: Standard: 4 hours (16A) / Long-Range: 4 hours 35 minutes (16A)
• DC Fast Charging 10-80%: 30 mins (under optimal conditions using DCFC with a minimum output of 120 kW)

Other features include Vehicle-to-Load (V2L) capabilities, battery preconditioning, and an optional heat pump. Hyundai still needs to share the exact pricing of the INSTER EV for Europe, but it has previously stated that it will be priced below 25,000 euros ($26,750).

Hyundai has promised more details as it approaches launching the new EV, which will arrive in Korea this summer before expanding to markets in Europe, the Middle East, and the Asia Pacific “in due course.”

Hyundai also teased a new variant of the new sub-compact called the INSTER CROSS in the works, described as having a “more rugged, outdoor-focused design.”

What do you think? Could this be another slam dunk for Hyundai Motor Group? Let us know in the comments below.

FTC: We use income earning auto affiliate links. More.

Scooter Doll is a writer, designer and tech enthusiast born in Chicago and based on the West Coast. When he’s not offering the latest tech how tos or insights, he’s probably watching Chicago sports. Please send any tips or suggestions, or dog photos to him at [email protected]

Dilemma on Wall Street: Short-Term Gain or Climate Benefit?

Portfolio managers have conflicting incentives as the economic and financial risks from climate change become more apparent but remain imprecise.

Credit... Edmon de Haro

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By Lydia DePillis

• June 20, 2024

A team of economists recently analyzed 20 years of peer-reviewed research on the social cost of carbon, an estimate of the damage from climate change. They concluded that the average cost, adjusted for improved methods, is substantially higher than even the U.S. government’s most up-to-date figure.

That means greenhouse gas emissions, over time, will take a larger toll than regulators are accounting for. As tools for measuring the links between weather patterns and economic output evolve — and the interactions between weather and the economy magnify the costs in unpredictable ways — the damage estimates have only risen.

It’s the kind of data that one might expect to set off alarm bells across the financial industry, which closely tracks economic developments that might affect portfolios of stocks and loans. But it was hard to detect even a ripple.

In fact, the news from Wall Street lately has mostly been about retreat from climate goals, rather than recommitment. Banks and asset managers are withdrawing from international climate alliances and chafing at their rules. Regional banks are stepping up lending to fossil fuel producers. Sustainable investment funds have sustained crippling outflows , and many have collapsed .

So what explains this apparent disconnect? In some cases, it’s a classic prisoner’s dilemma: If firms collectively shift to cleaner energy, a cooler climate benefits everyone more in the future. But in the short term, each firm has an individual incentive to cash in on fossil fuels, making the transition much harder to achieve.

And when it comes to avoiding climate damage to their own operations, the financial industry is genuinely struggling to comprehend what a warming future will mean.

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